بررسی یکنواختی لایه نازک SiO2 ، تولید شده با روش تبخیر باریکه الکترون و تبخیر گرمایی

In this paper, SiO2 thin film is produced by two methods: at the first method, SiO2 is evaporated by the electron gun and oxygen gas is injected to compensate for oxygen loss due to dissociation. At the second method, silicon monoxide is evaporated by thermal evaporation and during the evaporation time, substrate is bombarded by the ion oxygen that produced by an ion source. The refraction index, the extinction coefficient and the thickness layer are calculated by numerical method of the transmittance and reflectance equations. By the shift in the spectral transmittance, amount of non uniformity is calculated.  Results show that if the quantity of the current and the ion energy are selected properly, SiO2 film will not have absorption. Moreover, SiO2 film produced by the second method is more uniform than that of by the first method